Crystalline Growth of Wurtzite GAN on (111) GaAs
Title | Crystalline Growth of Wurtzite GAN on (111) GaAs |
Publication Type | Conference Paper |
Year of Publication | 1992 |
Authors | Jennifer T Ross, Michael D Rubin, Ture K Gustafson |
Conference Name | Materials Research Society Symposium |
Abstract | Gallium Nitride films were grown on (111) Gallium Arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550-600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented. |
DOI | 10.1557/PROC-242-457 |
LBNL Report Number | LBL-32258 |
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